page 1 of 5 notes a. performance and quality attributes and conditions not expressly stated in this specifcation document are intended to be excluded and do not form a part of this specifcation document. b. electrical specifcations and performance data contained in this specifcation document are based on mini-circuits applicable established test performance criteria and measurement instructions. c. the parts covered by this specifcation document are subject to mini-circuits standard limited warranty and terms and conditions (collectively, standard terms); purchasers of this part are entitled to the rights and benefts contained therein. for a full statement of the standard terms and the exclusive rights and remedies thereunder, please visit mini-circuits website at www.minicircuits.com/mclstore/terms.jsp mini-circuits ? www.minicircuits.com p.o. box 350166, brooklyn, ny 11235-0003 (718) 934-4500 sales@minicircuits.com product overview mini-circuits TSS-53LNB3+ is a low-noise amplifer offering industry-leading performance over its full fre - quency range from 500 mhz to 5 ghz. it contains internal switching, allowing the user control of the ampli - fer to handle both high and low signal levels by bypassing the lna in the presence of large signals. the TSS-53LNB3+ utilizes e-phemt technology to achieve excellent noise fgure performance in a unique cascade confguration enabling the combination of very wide band performance and fat gain. this model comes in a tiny, 3 x 3mm, 12-lead mclp package. feature advantages ultra-wideband: 500 mhz C 5 ghz ideal for a wide range of receiver applications including military, commercial wireless, and instrumentation. very fat gain ideal for broadband or multi-band applications. just one, cost-effcient model required for multiple frequency usage. minimal external matching components required. 15 db return loss typ. minimizes the need for external matching networks, simplifying circuit designs, and enabling the amplifer to operate over multiple bands in a single application circuit. internal bypass switch feature unique design handles low to high signal levels with minimal noise distortion. built-in dc blocking cap at rf-out port & separate pads for rf-out & vdd simplifes biasing eliminates need for bias-tee at output. compact size: 3 x 3 x 0.9 mm saves space in dense system layouts. low inductance, repeatable transitions, and excellent thermal contact. key features 50 ? 0.5 to 5 ghz the big deal ? very wideband, 500 mhz C 5 ghz ? ultra-fat gain, 0.7 db from 700 to 2100 mhz ? low nf over entire frequency band, 1.5 db typ. ? internal bypass switching extends useable dynamic range ? 3v operation TSS-53LNB3+ wideband low noise bypass amplifer case style: dq1225
page 2 of 5 notes a. performance and quality attributes and conditions not expressly stated in this specifcation document are intended to be excluded and do not form a part of this specifcation document. b. electrical specifcations and performance data contained in this specifcation document are based on mini-circuits applicable established test performance criteria and measurement instructions. c. the parts covered by this specifcation document are subject to mini-circuits standard limited warranty and terms and conditions (collectively, standard terms); purchasers of this part are entitled to the rights and benefts contained therein. for a full statement of the standard terms and the exclusive rights and remedies thereunder, please visit mini-circuits website at www.minicircuits.com/mclstore/terms.jsp mini-circuits ? www.minicircuits.com p.o. box 350166, brooklyn, ny 11235-0003 (718) 934-4500 sales@minicircuits.com function pad number description (see figure 2) rf-in 2 rf-input pad. connect to ground via l1. add a dc blocking cap in series of appropri - ate value if required. rf-out 8 rf-output pad. no external dc blocking cap required. current control 12 control current pad, voltage level on this pad sets the idd. connect to pad 11 via 3.92 k ? resistor. voltage enable 11 voltage enable pad. voltage level on this pad determines amplifer is on or bypassed. vdd 9 supply voltage pad. connect to vdd via l2. ground 1,3,4,5,6,7,10 paddle connect to ground. use via holes as shown in suggested layout for pcb design to reduce ground path inductance for best performance. product features ? wideband: 0.5-5 ghz ? built-in bypass switching ? low noise fgure: 1.5 db typ. at 2.0 ghz ? high gain: 18.4 db typ. at 2 ghz ? ultra flat gain: 0.7 db from 0.7 to 2.1 ghz ? p1db: +15.1 dbm typ. at 2.0 ghz ? minimal matching components ? specifed over full band operation rev. or m154883 TSS-53LNB3+ th/rs/cp 160722 general description TSS-53LNB3+ (rohs compliant) is an advanced ultra-fat gain low noise wideband amplifer fabricated using e-phemt technology offering extremely high dynamic range over a broad frequency range. it has integrated switches enabling users to bypass the amplifer during high signal conditions. in addition, the TSS-53LNB3+ has good input and output return loss over a broad frequency range without the need for external matching components. lead fnish is sn-ag alloy over ni and is enclosed in a 12-lead 3x3 mm mclp package for good thermal performance. typical applications ? wireless base station systems ? test and measurement systems ? multi-band receivers TSS-53LNB3+ case style: dq1225 0.5-5 ghz wideband low noise bypass amplifer simplifed schematic and bonding pad description top view +rohs compliant the +suffix identifies rohs compliance. see our web site for rohs compliance methodologies and qualifications
page 3 of 5 notes a. performance and quality attributes and conditions not expressly stated in this specifcation document are intended to be excluded and do not form a part of this specifcation document. b. electrical specifcations and performance data contained in this specifcation document are based on mini-circuits applicable established test performance criteria and measurement instructions. c. the parts covered by this specifcation document are subject to mini-circuits standard limited warranty and terms and conditions (collectively, standard terms); purchasers of this part are entitled to the rights and benefts contained therein. for a full statement of the standard terms and the exclusive rights and remedies thereunder, please visit mini-circuits website at www.minicircuits.com/mclstore/terms.jsp mini-circuits ? www.minicircuits.com p.o. box 350166, brooklyn, ny 11235-0003 (718) 934-4500 sales@minicircuits.com 5. permanent damage may occur if any of these limits are exceeded. electrical maximum ratings are not intended for continuous normal operation. TSS-53LNB3+ 1. measured on mini-circuits characterization test board tb-780+. see characterization test circuit (fig. 1) 2. current increases at p1db 3. (current at 85c - current at -45c)/130) absolute maximum ratings 4 parameter ratings operating temperature (ground lead) -40c to 85c storage temperature -65c to 150c total power dissipation 0.7 w input power amplifer-on 8 dbm (continuous), 19 dbm (5 min max.) amplifer bypass 16 dbm (continuous), 29 dbm (5 min max.) dc voltage vdd 7.0 v dc voltage enable 7.0 v max. voltage on pad 8 15 v electrical specifcations 1 at 25c, zo=50 ? and v dd =3v, unless otherwise noted parameter condition (ghz) amplifer-on amplifer-bypass units min. typ. max. typ. frequency range 0.5 5.0 ghz noise figure 0.5 1.3 db 1.0 1.3 2.0 1.5 3.0 1.6 4.0 1.7 5.0 1.8 gain 0.5 19.5 -0.8 db 1.0 19.3 -0.8 2.0 16.5 18.4 20.2 -1.1 3.0 17.2 -1.3 4.0 16.1 -1.6 5.0 14.8 -1.7 gain flatness 0.7 - 2.1 0.7 0.2 db input return loss 0.5 16.6 24.3 db 1.0 16.6 19.0 2.0 12.4 13.4 3.0 9.8 12.5 4.0 10.1 10.6 5.0 11.3 11.3 output return loss 0.5 18.5 24.1 db 1.0 18.3 17.7 2.0 18.8 13.2 3.0 12.9 13.5 4.0 10.2 11.5 5.0 6.5 10.6 output power @1db compression amp-on 2 input power @1db compression amp-bypass 2 0.5 13.6 28 dbm 1.0 14.8 2.0 14.9 29 3.0 14.7 4.0 14.7 5.0 13.9 29 output ip3 0.5 25.2 28.7 dbm 1.0 24.5 20.7 2.0 24.8 26.6 3.0 23.6 28.3 4.0 23.8 29.2 5.0 20.7 30.1 device operating voltage (vdd) 2.7 3 3.3 3 v device operating current (id) 42 2 ma enable voltage (ve) 3 0 v enable control current (ie) 2.0 0 ma dc current (id) variation vs. temperature 3 -19 a/c dc current (id) variation vs. voltage 0.008 ma/mv thermal resistance, junction-to-ground lead 60 c/w enable voltage (ve) fig. 1 min. typ. max. units amplifer-on 2.7 3.0 3.3 v amplifer-bypass 0 0.5 v monolithic e-phemt mmic amplifer
page 4 of 5 notes a. performance and quality attributes and conditions not expressly stated in this specifcation document are intended to be excluded and do not form a part of this specifcation document. b. electrical specifcations and performance data contained in this specifcation document are based on mini-circuits applicable established test performance criteria and measurement instructions. c. the parts covered by this specifcation document are subject to mini-circuits standard limited warranty and terms and conditions (collectively, standard terms); purchasers of this part are entitled to the rights and benefts contained therein. for a full statement of the standard terms and the exclusive rights and remedies thereunder, please visit mini-circuits website at www.minicircuits.com/mclstore/terms.jsp mini-circuits ? www.minicircuits.com p.o. box 350166, brooklyn, ny 11235-0003 (718) 934-4500 sales@minicircuits.com TSS-53LNB3+ fig 1 . block diagram of test circuit used for characterization. (dut soldered on mini-circuits characterization test board tb-780+) gain, return loss, output power at 1db compression (p1 db) , output ip3 (oip3) and noise fgure measured using agilents n5242a pna-x microwave network analyzer. conditions: 1. gain and return loss: pin= -25dbm 2. output ip3 (oip3): two tones, spaced 1 mhz apart, 0 dbm/tone at output. 3. switching time: pin=-25 dbm at 500 mhz. venable=3v at 10 khz. vd=3v. characterization test circuit product marking recommended application circuit fig 2 . recommended application circuit. switching specifcations (rise/fall time) parameter min. typ. max. units amplifer on to bypass off time (50% control to 10% rf) 55* ns fall time (90 to 10% rf) 34 amplifer bypass to on on time (50% control to 90% rf) 960* ns rise time (10% to 90% rf) 240 control voltage leakage 65 mv component size value units l1 0402 47 nh l2 0402 56 nh c1 0402 0.1 f c2 0402 10 f r1 0402 3.92 k ? component size value units l1 0402 47 nh l2 0402 56 nh r1 0402 3.92 k ? c1 0402 0.1 f c2 0402 10 pf c3 0402 1000 pf schmitt trigger sn74lvc2g17dckr texas instruments mcl tss53 black body model family designation index over pad 1 * measured with 25ns uncertainty monolithic e-phemt mmic amplifer
page 5 of 5 notes a. performance and quality attributes and conditions not expressly stated in this specifcation document are intended to be excluded and do not form a part of this specifcation document. b. electrical specifcations and performance data contained in this specifcation document are based on mini-circuits applicable established test performance criteria and measurement instructions. c. the parts covered by this specifcation document are subject to mini-circuits standard limited warranty and terms and conditions (collectively, standard terms); purchasers of this part are entitled to the rights and benefts contained therein. for a full statement of the standard terms and the exclusive rights and remedies thereunder, please visit mini-circuits website at www.minicircuits.com/mclstore/terms.jsp mini-circuits ? www.minicircuits.com p.o. box 350166, brooklyn, ny 11235-0003 (718) 934-4500 sales@minicircuits.com TSS-53LNB3+ esd rating human body model (hbm): class 1a (250 to <500v) in accordance with ansi/esd stm 5.1 - 2001 machine model (mm): class m1 (pass 50v) in accordance with ansi/esd stm5.2-1999 msl rating moisture sensitivity: msl1 in accordance with ipc/jedec j-std-020d additional detailed technical information additional information is available on our dash board. to access this information click here performance data data table swept graphs s-parameter (s2p files) data set (.zip fle) case style dq1225 plastic package, exposed paddle, terminal fnish: tin-silver over nickel. tape & reel f66 standard quantities available on reel 7 reels with 20, 50, 100, 200, 500 or 1k devices. suggested layout for pcb design pl-421 evaluation board tb-779-3+ environmental ratings env12 additional notes a. performance and quality attributes and conditions not expressly stated in this specifcation document are intended to be excluded and do not form a part of this specifcation document. b. electrical specifcations and performance data contained in this specifcation document are based on mini-circuits applicable established test performance criteria and measurement instructions. c. the parts covered by this specifcation document are subject to mini-circuits standard limited warranty and terms and conditions (collectively, standard terms); purchasers of this part are entitled to the rights and benefts contained therein. for a full statement of the standard terms and the exclusive rights and remedies thereunder, please visit mini-circuits website at www.minicircuits.com/mclstore/terms.jsp visual inspection electrical test sam analysis refow 3 cycles, 260c soak 85c/85rh 168 hours bake at 125c, 24 hours visual inspection electrical test sam analysis start finish monolithic e-phemt mmic amplifer
|
